(Pack of 5) 1N5822 Schottky Barrier Diode.

The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.

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Features:-

Extremely Low VF
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Shipped in plastic bags, 500 per bag
Available in Tape and Reel, 1500 per reel, by adding a “RL” suffix to the part number
Pb-Free Packages are Available

Mechanical Characteristics:-

Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band

*product image for illustration purposes only. actual product may vary.

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