FQT13N06 N Channel QFET Mosfet SOT-223 Package

FQT13N06 N Channel QFET Mosfet SOT-223 Package

The FQT13N06 is a high-efficiency N-Channel MOSFET designed for low-voltage, high-speed switching applications.
With a drain-source voltage of 60V and low on-resistance, it provides fast switching, minimal power loss, and reliable performance, making it ideal for DC–DC converters, load switching, and power management circuits.
The SOT-223 surface-mount package allows compact PCB design, effective thermal performance, and easy integration into modern electronic devices.

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Features

• N-Channel MOSFET (QFET) – suitable for low-side switching
• Voltage Rating: 60V drain-source
• Low On-Resistance: Efficient current conduction with minimal heat
• Fast Switching Speed: Ideal for PWM, DC–DC, and power control applications
• Logic-Level Gate Drive: Compatible with low-voltage control signals
• Compact SOT-223 Package: Space-efficient and thermally stable
• Reliable & Rugged: Stable under thermal and electrical stress
• RoHS Compliant: Lead-free and environmentally friendly

Applications

• DC–DC converters – efficient power regulation
• Load switches – reliable switching in compact circuits
• Battery-powered devices – energy-efficient control
• Microcontroller-based switching circuits – logic-level load control
• LED drivers & lighting systems – low-voltage high-efficiency switching
• Portable electronics – smartphones, tablets, wearables
• General-purpose low-voltage switching – consumer and industrial electronics

FQT13N06 Datasheet