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20N60 MOSFET – 650V 20.7A N-Channel Power MOSFET TO-247 Package

120.00 Excluding tax

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20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.


  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • High peak current capability
  • Improved transconductance


Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 650V
Continuous Drain Current (Id) 20.7A
Drain-Source Resistance (Rds On) 190mOhms
Gate-Source Voltage (Vgs) 20V
Configuration Single
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 208W

20n60 datasheet

* product image for illustration purposes only. actual product may vary.


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