20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Improved transconductance
|Number of Channels||1 Channel|
|Drain-Source Breakdown Voltage (Vds)||650V|
|Continuous Drain Current (Id)||20.7A|
|Drain-Source Resistance (Rds On)||190mOhms|
|Gate-Source Voltage (Vgs)||20V|
|Operating Temperature Range||-55 – 150°C|
|Power Dissipation (Pd)||208W|
* product image for illustration purposes only. actual product may vary.