2N3439 NPN Bipolar Low Power Transistor 350V 1A TO-39 Metal Package

2N3439 NPN Bipolar Low Power Transistor 350V 1A TO-39 Metal Package

The 2N3439 is a high-voltage, low-power NPN bipolar junction transistor (BJT) designed for reliable performance in high-voltage switching and amplification applications. With a collector-emitter voltage rating of 350V and a collector current of 1A, it is particularly well-suited for circuits that require high voltage handling but moderate current, such as signal processing, voltage regulation, and industrial electronics.

Built using high-quality silicon planar technology, the transistor delivers stable gain, low leakage current, and efficient switching performance. Its TO-39 metal package ensures excellent thermal dissipation, mechanical robustness, and long-term reliability, allowing it to operate safely in both laboratory and industrial environments.

The 2N3439 offers low saturation voltage and moderate gain, which makes it ideal for linear amplification, high-voltage switching, and driver stages for larger power transistors. Its design allows it to withstand high-voltage transients while maintaining consistent operation, making it a preferred choice for high-voltage amplifier circuits, control electronics, and educational experimentation.

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Key Features

• High-voltage, low-power NPN BJT
• Collector-Emitter Voltage (Vce): 350V
• Collector Current (Ic): 1A
• Collector-Base Voltage (Vcb): 350V
• Emitter-Base Voltage (Veb): 5V
• Power Dissipation (Ptot): 20W
• DC Current Gain (hFE): 20–70
• Transition Frequency (fT): 20 MHz (typical)
• TO-39 Metal Package: Excellent heat dissipation and durability
• Rugged Construction: Can handle high-voltage operation reliably
• Low Leakage Current: Efficient and stable performance
• RoHS Compliant

Applications

• High-voltage switching circuits
• Linear and signal amplification in high-voltage systems
• Driver stages for larger transistors
• Voltage regulators and power supply circuits
• Relay and solenoid drivers in industrial applications
• Audio and RF amplification requiring high voltage operation
• Educational and experimental electronics projects
• Replacement for legacy high-voltage designs

2n3439-transistor-datasheet