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2N7000 FET – N-Channel Enhancement Mode FET TO-92 Package

9.00 Excluding tax

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2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features:-

• High density cell design for low RDS(ON)

• Voltage controlled small signal switch

• Rugged and reliable

• High saturation current capability

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 60V
Continuous Drain Current (Id) 200mA
Drain-Source Resistance (Rds On) 5Ohms
Gate-Source Voltage (Vgs) 20V
Configuration Single
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 400mW

2n7000 mosfet datasheet

* product image for illustration purposes only. actual product may vary.

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