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2SK1120 MOSFET – 1000V 8A N-Channel Power MOSFET TO-3PN Package

135.00 Excluding tax

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2SK1120  utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


• Low drain−source ON resistance

• High forward transfer admittance

• Low leakage current

• Enhancement mode

• RDS (ON) = 1.5 Ω (typ.)

• |Yfs| = 4.0 S (typ.)

•  IDSS = 300 μA (max) (VDS = 800 V)

•  1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 1000V
Continuous Drain Current (Id) 8A
Drain-Source Resistance (Rds On) 1.8Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 120 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 150W


* product image for illustration purposes only. actual product may vary.


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