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2SK2611 MOSFET – 900V 9A N-Channel Power MOSFET TO-3PN Package

105.00 Excluding tax

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K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features:-

• 9A,900V, RDS(on)(Max1.1Ω)@VGS=10V

• Ultra-low Gate charge(Typical 58nC)

• Fast Switching Capability

• 100%Avalanche Tested

• Maximum Junction Temperature Range(150℃)

Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 900V
Continuous Drain Current (Id) 9A
Drain-Source Resistance (Rds On) 1.1Ohms
Gate-Source Voltage (Vgs) 30V
Gate Charge (Qg) 58 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 150W

2sk2611-mosfet-datasheet

* product image for illustration purposes only. actual product may vary.

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