K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features:-
• 9A,900V, RDS(on)(Max1.1Ω)@VGS=10V
• Ultra-low Gate charge(Typical 58nC)
• Fast Switching Capability
• 100%Avalanche Tested
• Maximum Junction Temperature Range(150℃)
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 900V |
| Continuous Drain Current (Id) | 9A |
| Drain-Source Resistance (Rds On) | 1.1Ohms |
| Gate-Source Voltage (Vgs) | 30V |
| Gate Charge (Qg) | 58 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 150W |
* product image for illustration purposes only. actual product may vary.
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