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2SK2698 MOSFET – 500V 15A N-Channel Power MOSFET TO-3PN Package

124.00 Excluding tax

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2SK2698 N-Channel enhancement mode power field effect transistors are produced using Toshiba proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features:-

• Low drain−source ON resistance

• High forward transfer admittance

• Low leakage current

• Enhancement mode

Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 500V
Continuous Drain Current (Id) 15A
Drain-Source Resistance (Rds On) 0.35Ohms
Gate-Source Voltage (Vgs) 30V
Gate Charge (Qg) 58 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 150W

2sk2698-mosfet-datasheet

* product image for illustration purposes only. actual product may vary.

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