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2SK3878 MOSFET – 900V 9A N-Channel Power MOSFET TO-3P Package

160.48 Incl. Tax

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2SK3878 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.


• Low drain−source ON resistance

• High forward transfer admittance

• Low leakage current

• Enhancement mode


Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 900V
Continuous Drain Current (Id) 9A
Drain-Source Resistance (Rds On) 1Ohms
Gate-Source Voltage (Vgs) 30V
Gate Charge (Qg) 60 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 150W


* product image for illustration purposes only. actual product may vary.


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