The 3P4MH and 3P6MH are P-gate fully diffused mold SCRs With an average on-current Of 3 A. The repeat peak Off- voltages (and reverse voltages) are 400 V and 600 V.
• This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing Of lead Wires and heat sink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-O).
Non contact switches Of consumer electronic equipment, electric equipment s, audio equipment, and light industry equipment.
|VRSM||Non-Repetitive Peak Reverse Voltage||500||V|
|VDSM||Non-Repetitive Peak Off-state Voltage||500||V|
|VRRM||Repetitive Peak Reverse Voltage||400||V|
|VDRM||Repetitive Peak Off-state Voltage||400||V|
|IT(AV)||Average on-state current||3 (Tc = 87°C, Single half-wave, θ = 180°)||A|
|IT(RMS)||Effective on-state current||4.7||A|
|ITSM||Surge Non-Repetitive On-state Current||65 (f = 50 Hz, Sine half-wave, 1 cycle)||A|
|∫ it 2 dt||Fusing current||20 (1 ms≤t≤10 ms)||A2 s|
|dIT/dt||Critical rate of rise of on-state current||50||A/µs|
|PGM||Peak Gate Power Dissipation||2 (f ≥ 50 Hz, Duty≤ 10%)||W|
|PG(IAV)||Average Gate Power Dissipation||0.1||W|
|IFGM||Peak Gate Forward Current||1 (f ≥ 50 Hz, Duty≤ 10%)||A|
|VRGM||Peak Gate Reverse Voltage||6||V|
|Tj||Junction Temperature||-40 to 125||°C|
|Tstg||Storage Temperature||-50 to 150||°C|
* product image for illustration purposes only. actual product may vary.