The 3P4MH and 3P6MH are P-gate fully diffused mold SCRs With an average on-current Of 3 A. The repeat peak Off- voltages (and reverse voltages) are 400 V and 600 V.
Features:-
• This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing Of lead Wires and heat sink (tablet) using jigs is also possible.
• Employs flame-retardant epoxy resin (UL94V-O).
Applications:-
Non contact switches Of consumer electronic equipment, electric equipment s, audio equipment, and light industry equipment.
Specification:-
| Symbol | Parameter | Ratings | Units |
| VRSM | Non-Repetitive Peak Reverse Voltage | 500 | V |
| VDSM | Non-Repetitive Peak Off-state Voltage | 500 | V |
| VRRM | Repetitive Peak Reverse Voltage | 400 | V |
| VDRM | Repetitive Peak Off-state Voltage | 400 | V |
| IT(AV) | Average on-state current | 3 (Tc = 87°C, Single half-wave, θ = 180°) | A |
| IT(RMS) | Effective on-state current | 4.7 | A |
| ITSM | Surge Non-Repetitive On-state Current | 65 (f = 50 Hz, Sine half-wave, 1 cycle) | A |
| ∫ it 2 dt | Fusing current | 20 (1 ms≤t≤10 ms) | A2 s |
| dIT/dt | Critical rate of rise of on-state current | 50 | A/µs |
| PGM | Peak Gate Power Dissipation | 2 (f ≥ 50 Hz, Duty≤ 10%) | W |
| PG(IAV) | Average Gate Power Dissipation | 0.1 | W |
| IFGM | Peak Gate Forward Current | 1 (f ≥ 50 Hz, Duty≤ 10%) | A |
| VRGM | Peak Gate Reverse Voltage | 6 | V |
| Tj | Junction Temperature | -40 to 125 | °C |
| Tstg | Storage Temperature | -50 to 150 | °C |
* product image for illustration purposes only. actual product may vary.
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