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BD137 NPN Bipolar Medium Power Transistor 60V 1.5A TO-126 Package

10.00 Excluding tax

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BD137 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

• Low saturation voltage

• Simple drive requirements

• High safe operating area

• For low distortion complementary designs

• Easy to carry and handle

Specifications:-

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 60V
Collector−Base Voltage (VCBO) 60V
Continuous Collector Current (Ic) 1.5A
Continuous Base Current (Ib) 0.5A
DC Current Gain (hFE) 40-250
Operating Temperature Range -65 – 150°C
Power Dissipation (Pd) 12.5W
Thermal Resistance (ΘJA) 100°C/W
Thermal Resistance (ΘJC) 10°C/W

bd137-transistor-datasheet

* product image for illustration purposes only. actual product may vary.

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