BDX33C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs
• Easy to carry and handle
|Collector−Emitter Voltage (VCEO)||100V|
|Collector−Base Voltage (VCBO)||100V|
|Continuous Collector Current (Ic)||10A|
|Continuous Base Current (Ib)||0.2A|
|Operating Temperature Range||-65 – 150°C|
|Power Dissipation (Pd)||70W|
|DC Current Gain (hFE)||750|
|Thermal Resistance Junction-case||1.78°C/W|
* product image for illustration purposes only. actual product may vary.