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CNY65B Photo-transistor Output Optocoupler IC DIP-4 Package

169.00 Excluding tax

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The CNY65 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for the highest safety requirements of > 3 mm.


• Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak

• Thickness through insulation 3 mm

• Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 200

• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC


Parameter Value
Package / Case DIP-4
Length 17.8 mm
Width 9.6 mm
Height 6.1 mm
Collector-Emitter Breakdown Voltage 32 V
Configuration 1 Channel
Current Transfer Ratio 100 % to 200 %
Description/Function Optocoupler, Phototransistor Output, Very High Isolation Voltage
Fall Time 2.7 us
Isolation Voltage 8200 Vrms
Maximum Collector Current 50 mA
Maximum Collector Emitter Saturation Voltage 0.3 V
Maximum Collector Emitter Voltage 32 V
Maximum Operating Temperature + 85 C
Minimum Operating Temperature – 55 C
Mounting Style Through Hole
Number of Channels 1 Channel
Output Type NPN Phototransistor
Packaging Tube
Pd – Power Dissipation 250 mW
Product Type Transistor Output Optocouplers
Rise Time 2.4 us
Series CNY

* product image for illustration purposes only. actual product may vary.


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