The CNY74-4 consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one lead frame using a co planar technique, providing a fixed distance between input and output for highest safety requirements.
Features:-
• CNY74-4 includes 4 isolator channels
• DC isolation test voltage VIO = 2.5 kV
• Test class 25/100/21 DIN 40 045
• Low coupling capacitance of typical 0.3 pF
• Current Transfer Ratio (CTR) of typical 100%
• Low temperature coefficient of CTR
• Wide ambient temperature range
Applications:- Galvanically separated circuits, non-interacting switches.
Specification:-
| Symbol | Parameter | Value | Unit |
| VR | Reverse voltage | 6 | V |
| IF | Forward current | 60 | mA |
| IFSM | Surge current | 1.5 | A |
| PV | Power dissipation | 100 | mW |
| VCEO | Collector-emitter breakdown voltage | 70 | V |
| VEBO | Emitter-base breakdown voltage | 7 | V |
| IC | Collector current | 100 | mA |
| TJ | Junction temperature | 125 | °C |
| ICM | Peak collector current | 100 | mA |
* product image for illustration purposes only. actual product may vary.
Reviews
There are no reviews yet