The DG508 is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address (A0, A1, A2). Break-before-make switching action protects against momentary cross talk between adjacent channels. An on channel conducts current equally well in both directions. In the off state each channel blocks voltages up to the power supply rails. An enable (EN) function allows the user to reset the multiplexer / demultiplexer to all switches off for stacking several devices. All control inputs, addresses (AX) and enable (EN) are TTL compatible over the full specified operating temperature range. The DG508B is fabricated on an enhanced SG-II CMOS process that achieves improved performance on: reduced charge injection, lower device leakage, and minimized parasitic capacitance. As the DG508 has a long history in the industry with many suppliers offering copies – and in some cases improved variations – with the best in class improvements. Applications for the DG508B include high speed and high precision data acquisition, audio signal switching and routing, ATE systems, and avionics. High performance and low power dissipation make them ideal for battery operated and remote instrumentation applications. The DG508B have the absolute maximum voltage rating extended to 44 V. Additionally, single supply operation is also allowed. An epitaxial layer prevents latch-up. The DG508B is both available in 16-lead SOIC, TSSOP, PDIP, and mini QFN (1.8 mm x 2.6 mm) package options with extended temperature range of -40 °C to +125 °C.
• Operate with single or dual power supply
• V+ to V- analog signal swing range
• 44 V power supply maximum rating
• Extended operate temperature range: -40 °C to +125 °C
• Low leakage typically < 3 pA
• Low charge injection – QINJ = 2 pC
• Low power – ISUPPLY: 10 μA
• TTL compatible logic
• > 250 mA latch-up current per JESD78
• Available in SOIC16, TSSOP16, PDIP, and miniQFN16 packages
• Superior alternative to: – DG508A, HI-508
|Voltages Referenced to V-: V+, GND||44, 25||V|
|Digital Inputs a, VS, VD||(V-) – 2 to (V+) + 2||V|
|or 20 mA, whichever occurs first|
|Current (Any terminal)||30||mA|
|Peak Current, S or D||100||mA|
|(Pulsed at 1 ms, 10 % duty cycle max.)|
|Storage Temperature||-65 to +150||°C|
|Thermal Resistance (θJA) b||159.6||°C/W|
* product image for illustration purposes only. actual product may vary.
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