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H11F1 Photo FET Optocoupler IC DIP-6 Package

118.00 Excluding tax

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The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.


• As a remote variable resistor

• ≤ 100Ω to ≥ 300 MΩ

• ≥ 99.9% linearity

• ≤ 15 pF shunt capacitance

• ≥ 100 GΩ I/O isolation resistance As an analog switch

• Extremely low offset voltage

• 60 Vpk-pk signal capability

• No charge injection or latch-up

• ton, toff ≤ 15 µS

• UL recognized (File #E90700)

• VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300)


• As a variable resistor-

Isolated variable attenuator

Automatic gain control

Active filter fine tuning/band switching

• As an analog switch-

Isolated sample and hold circuit

Multiplexed, optically isolated A/D conversion


Symbol Parameter Value Unit
IF Forward current 60 mA
PD Power dissipation 100 mW
VR Reverse Voltage 5 V
Tstg Storage temperature range – 55 to + 150 °C
TOPR Operating Temperature – 55 to + 150 °C
TSOL Lead Solder Temperature 260 for 10 sec °C
F(pk) Forward Current – Peak (10 µs pulse, 1% duty cycle) 1 A
BV4-6 Breakdown Voltage (either polarity) ±30 V

* product image for illustration purposes only. actual product may vary.


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