IRF1405 stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced process technology
• Ultra low on-resistance
• Dynamic dv/dt rating
• Fast switching
• Repetitive avalanche allowed up to Tjmax
|Number of Channels||1 Channel|
|Drain-Source Breakdown Voltage (Vds)||55V|
|Continuous Drain Current (Id)||169A|
|Drain-Source Resistance (Rds On)||5.3mOhms|
|Gate-Source Voltage (Vgs)||20V|
|Gate Charge (Qg)||260 nC|
|Operating Temperature Range||-55 – 175°C|
|Power Dissipation (Pd)||330W|
* product image for illustration purposes only. actual product may vary.
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