IRF1405 stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features:-
• Advanced process technology
• Ultra low on-resistance
• Dynamic dv/dt rating
• Fast switching
• Repetitive avalanche allowed up to Tjmax
• Lead-free
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current (Id) | 169A |
| Drain-Source Resistance (Rds On) | 5.3mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 260 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 330W |
* product image for illustration purposes only. actual product may vary.
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