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IRF1407 MOSFET – 75V 130A N-Channel HEXFET Power MOSFET TO-220 Package

140.42 Incl. Tax

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IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.


  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dv/dt rating
  • Fast switching
  • Repetitive avalanche allowed up to Tjmax


Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 75V
Continuous Drain Current (Id) 130A
Drain-Source Resistance (Rds On) 7.8mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 250 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 330W


* product image for illustration purposes only. actual product may vary.


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