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IRF2807 MOSFET – 75V 82A N-Channel HEXFET Power MOSFET TO-220 Package

50.00 + GST

Availability: In stock

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IRF2807 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dv/dt rating
  • Fast switching
  • Fully avalanche rated


Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 75V
Continuous Drain Current (Id) 82A
Drain-Source Resistance (Rds On) 13mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 160 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 230W


* product image for illustration purposes only. actual product may vary.


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