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IRF3710 MOSFET – 100V 57A N-Channel HEXFET Power MOSFET TO-220 Package

52.00 Excluding tax

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IRF3710 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:-

• Advanced process technology

• Ultra low on-resistance

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated

Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 57A
Drain-Source Resistance (Rds On) 23mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 130 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 200W

irf3710-mosfet-datasheet

* product image for illustration purposes only. actual product may vary.

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