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IRF4905 MOSFET – 55V 74A P-Channel HEXFET Power MOSFET TO-220 Package

79.00 Excluding tax

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IRF4905 is fifth generation HEXFET® Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:-

• Advanced process technology

• Ultra low on-resistance

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated

Specifications:-

Number of Channels 1 Channel
Transistor Polarity P-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 74A
Drain-Source Resistance (Rds On) 20mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 180 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 200W

irf4905-mosfet-datasheet

* product image for illustration purposes only. actual product may vary.

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