IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
|Number of Channels||1 Channel|
|Drain-Source Breakdown Voltage (Vds)||100V|
|Continuous Drain Current (Id)||5.6A|
|Drain-Source Resistance (Rds On)||540mOhms|
|Gate-Source Voltage (Vgs)||20V|
|Gate Charge (Qg)||8.3 nC|
|Operating Temperature Range||-55 – 175°C|
|Power Dissipation (Pd)||43W|
* product image for illustration purposes only. actual product may vary.