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IRF5305 MOSFET – 55V 31A P-Channel HEXFET Power MOSFET TO-220 Package

70.00 Excluding tax

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IRF5305 fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:-

• Advanced process technology

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated

Specifications:-

Number of Channels 1 Channel
Transistor Polarity P-Channel
Drain-Source Breakdown Voltage (Vds) -55V
Continuous Drain Current (Id) -31A
Drain-Source Resistance (Rds On) 60mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 63 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 110W

irf5305-mosfet-datasheet

* product image for illustration purposes only. actual product may vary.

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