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IRF630 MOSFET – 200V 9A N-Channel Power MOSFET TO-220 Package

30.00 Excluding tax

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IRF630 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features:-

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Compliant to RoHS directive 2002/95/EC

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 9A
Drain-Source Resistance (Rds On) 0.4Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 43 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 74W

irf630-mosfet-datasheet

* product image for illustration purposes only. actual product may vary.

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