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IRF644 MOSFET – 250V 14A N-Channel Power MOSFET TO-220 Package

82.00 Excluding tax

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IRF644 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 125 W.

Features:-

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 250V
Continuous Drain Current (Id) 14A
Drain-Source Resistance (Rds On) 0.28Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 68 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 125W

irf644-mosfet-datasheet

* product image for illustration purposes only. actual product may vary.

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