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IRF740 MOSFET – 400V 10A N-Channel Power MOSFET TO-220 Package

42.00 Excluding tax

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IRF740 is type of N-Channel enhancement mode power field effect transistors which are using planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.


• Low gate charge

• Low Crss (typical 35 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability


Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 400V
Continuous Drain Current (Id) 10A
Drain-Source Resistance (Rds On) 0.54Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 53 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 134W


* product image for illustration purposes only. actual product may vary.


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