IRF9610 MOSFET 200V 1.8A P Channel Hexfet Power TO-220 Package
The IRF9610 is a high-performance P-channel HEXFET® Power MOSFET designed for efficiency, reliability, and precision in modern electronic designs.
With a drain-source voltage of 200V and a continuous drain current of 1.8A, it offers low on-resistance, fast switching, and minimal power loss, while its TO-220 package ensures excellent thermal management.
Built using advanced HEXFET® technology, the IRF9610 delivers consistent performance, rugged durability, and easy integration into a wide range of circuits — from power supplies to motor drivers — even under demanding conditions.
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Features
- High Voltage Handling: Up to 200V drain-source voltage for demanding power applications
- Low On-Resistance: Minimizes conduction losses, improving efficiency
- Fast Switching Speed: Ideal for high-speed switching circuits
- Rugged HEXFET® Design: Reliable operation under high stress and temperature
- Easy Gate Drive: Compatible with standard control logic and drivers
- TO-220 Package: Ensures efficient heat dissipation and easy mounting
- Wide Temperature Range: Operates reliably from -55°C to +150°C
- P-Channel Operation: Perfect for high-side switching applications
Applications
- High-fidelity audio amplifier output stages – clean, distortion-free sound
- DC–DC converters & power supplies – efficient and stable voltage regulation
- Motor control circuits – precise control of DC motors in robotics and automation
- Industrial instrumentation – reliable switching for sensors and measurement devices
- Power management in embedded systems – high-side switching for microcontroller circuits
- Lighting systems – LED drivers and electronic dimmers
- Battery-powered devices – efficient load switching to maximize battery life
- Solar and renewable energy systems – switching and protection in low-to-medium power setups
- UPS and inverter circuits – dependable operation in backup power systems
- General-purpose switching applications – versatile for medium-power circuits
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