IRFBE30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
|Number of Channels||1 Channel|
|Drain-Source Breakdown Voltage (Vds)||800V|
|Continuous Drain Current (Id)||4.1A|
|Drain-Source Resistance (Rds On)||3Ohms|
|Gate-Source Voltage (Vgs)||20V|
|Gate Charge (Qg)||78 nC|
|Operating Temperature Range||-55 – 150°C|
|Power Dissipation (Pd)||125W|
* product image for illustration purposes only. actual product may vary.