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IRFBE30 MOSFET – 800V 4.1A N-Channel Power MOSFET TO-220 Package

104.00 Excluding tax

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IRFBE30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:-

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 800V
Continuous Drain Current (Id) 4.1A
Drain-Source Resistance (Rds On) 3Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 78 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 125W

irfbe30-mosfet-datasheet

* product image for illustration purposes only. actual product may vary.

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