IRFBE30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 800V |
| Continuous Drain Current (Id) | 4.1A |
| Drain-Source Resistance (Rds On) | 3Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 78 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 125W |
* product image for illustration purposes only. actual product may vary.
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