IRFP254N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
• Advanced process technology
• Dynamic dv/dt rating
• Fast switching
• Fully avalanche rated
• Ease of paralleling
• Simple drive requirements
|Number of Channels||1 Channel|
|Drain-Source Breakdown Voltage (Vds)||250V|
|Continuous Drain Current (Id)||23A|
|Drain-Source Resistance (Rds On)||125mOhms|
|Gate-Source Voltage (Vgs)||20V|
|Gate Charge (Qg)||100 nC|
|Operating Temperature Range||-55 – 175°C|
|Power Dissipation (Pd)||220W|
* product image for illustration purposes only. actual product may vary.
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