IRFP2907 are Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
• Advanced process technology
• Ultra low on-resistance
• Dynamic dv/dt rating
• Fast switching
• Repetitive avalanche allowed up to Tjmax
|Number of Channels||1 Channel|
|Drain-Source Breakdown Voltage (Vds)||75V|
|Continuous Drain Current (Id)||209A|
|Drain-Source Resistance (Rds On)||4.5mOhms|
|Gate-Source Voltage (Vgs)||20V|
|Gate Charge (Qg)||620 nC|
|Operating Temperature Range||-55 – 175°C|
|Power Dissipation (Pd)||470W|
* product image for illustration purposes only. actual product may vary.