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IRFP2907 MOSFET – 75V 209A N-Channel Power MOSFET TO-247 Package

355.00 Excluding tax

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IRFP2907 are Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:-

• Advanced process technology

• Ultra low on-resistance

• Dynamic dv/dt rating

• Fast switching

• Repetitive avalanche allowed up to Tjmax

Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 75V
Continuous Drain Current (Id) 209A
Drain-Source Resistance (Rds On) 4.5mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 620 nC
Operating Temperature Range -55 – 175°C
Power Dissipation (Pd) 470W

irfp2907-mosfet-datasheet

* product image for illustration purposes only. actual product may vary.

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