IRFP350 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
• Avalanche Rugged Technology
• Lower Input Capacitance
• Extended Safe Operating Area
• Lower Leakage Current: 10µA (Max.) @ VDS = 400V
• Improved Gate Charge
|Number of Channels||1 Channel|
|Drain-Source Breakdown Voltage (Vds)||400V|
|Continuous Drain Current (Id)||16A|
|Drain-Source Resistance (Rds On)||300mOhms|
|Gate-Source Voltage (Vgs)||30V|
|Gate Charge (Qg)||150 nC|
|Operating Temperature Range||-55 – 150°C|
|Power Dissipation (Pd)||190W|
* product image for illustration purposes only. actual product may vary.