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MJE200 NPN Power Transistor 25V 5A TO-126 Package

24.00 Excluding tax

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MJE200 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

• High DC current gain

• Low collector−emitter saturation voltage

• High current−gain − bandwidth product

• Annular construction for low leakage

• These devices are Pb−Free and are RoHS compliant

Specifications:-

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 40VDC
Collector−Base Voltage (VCBO) 25VDC
Emitter−Base Voltage (VEBO) 8VDC
Continuous Collector Current (Ic) 5ADC
Continuous Base Current (Ib) 1ADC
Power Dissipation (Pd) 15W
Operating Temperature Range -65 – 150°C
DC Current Gain (hFE) 45-180

mje200-transistor-datasheet

* product image for illustration purposes only. actual product may vary.

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