MJE350 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Features:-
• High DC current gain
• Low collector−emitter saturation voltage
• High current−gain − bandwidth product
• Annular construction for low leakage
• Complementary NPN – PNP devices
Specifications:-
| Transistor Polarity | PNP |
| Collector−Emitter Voltage (VCEO) | 300V |
| Collector−Base Voltage (VCBO) | 300V |
| Emitter−Base Voltage (VEBO) | 3V |
| Continuous Collector Current (Ic) | 0.5A |
| Power Dissipation (Pd) | 20.8W |
| Operating Temperature Range | -65 – 150°C |
| DC Current Gain (hFE) | 30-240 |
* product image for illustration purposes only. actual product may vary.
Reviews
There are no reviews yet