(Pack of 5) 1N5822 Schottky Barrier Diode.
The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
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Features:-
- Extremely Low VF
- Low Power Loss/High Efficiency
- Low Stored Charge, Majority Carrier Conduction
- Shipped in plastic bags, 500 per bag
- Available in Tape and Reel, 1500 per reel, by adding a “RL” suffix to the part number
- Pb-Free Packages are Available
Mechanical Characteristics:-
- Case: Epoxy, Molded
- Weight: 1.1 Gram (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
- Polarity: Cathode indicated by Polarity Band
*product image for illustration purposes only. actual product may vary.







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