R6076ENZ4 N-Channel Power MOSFET 600V 76A – TO-247 Low-Noise High Power Switching Transistor

R6076ENZ4 N-Channel Power MOSFET 600V 76A – TO-247 Low-Noise High Power Switching Transistor

The R6076ENZ4 N-Channel Power MOSFET is a high-performance switching transistor engineered for demanding high-voltage and high-current power electronics applications. Featuring a 600V drain-source voltage (VDS) rating and 76A continuous drain current capability, this MOSFET offers efficient switching, low conduction losses, and excellent thermal performance.

Designed in a robust TO-247 through-hole package, the R6076ENZ4 provides superior heat dissipation and reliable operation in high-power circuits. Its low-noise switching characteristics make it ideal for applications requiring improved efficiency and reduced electromagnetic interference (EMI), such as SMPS, solar inverters, UPS systems, motor drives, welding equipment, and industrial power supplies.

Key Features

• N-Channel low-noise power MOSFET
• Drain-Source Voltage (VDS): 600V
• Continuous Drain Current (ID): 76A
• Low ON-state resistance for improved efficiency
• Fast switching with reduced switching losses
• Low-noise operation for improved EMI performance
• TO-247 through-hole package for excellent heat dissipation
• High reliability and long operational life
• Suitable for high-power switching applications

Applications

• Switching Mode Power Supplies (SMPS)
• Solar inverters and power converters
• UPS and industrial inverters
• Motor drives and motor controllers
• PFC (Power Factor Correction) circuits
• Welding machines
• Industrial automation equipment
• High-power electronic repair and DIY projects

R6076ENZ4 Datasheet

*product image for illustration purposes only. actual product may vary.