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BU505 – NPN High Voltage Multiepitaxial Fast Switching Transistor

25.00 Excluding tax

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BU505 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features

• High Ruggedness

• Simple drive requirements

• High safe operating area

• For low distortion complementary designs

• Easy to carry and handle

Specifications

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 1500V
Continuous Collector Current (Ic) 2.5A
Continuous Base Current (Ib) 1A
Operating Temperature Range -65 – 150°C
Power Dissipation (Pd) 75W
Collector Peak Current (ICM) 4A
Thermal Resistance Junction-Case 1.67°C/W
Fall Time (tF) 350 ns

* product image for illustration purposes only. actual product may vary.

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