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BUZ90 N-Channel Mosfet Power Transistor 600V 4.5A TO-220 Package

58.00 Excluding tax

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BUZ90 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

• High Ruggedness

• Simple drive requirements

• High safe operating area

• For low distortion complementary designs

• Easy to carry and handle

Specifications:-

Transistor Polarity N-Channel
Drain−Source Voltage (VDS) 600V
Drain Current (Id) 4.5A
Drain−Source Resistance (RDS) 1.6 ohm
Power Dissipation (Pd) 500mW
Operating Temperature Range -65 – 200°C
Output Capacitance (Cobo) 4pF
Input Capacitance (Cibo) 5pF
Storage Time (ts) 13 ns

buz90-transistor-datasheet

* product image for illustration purposes only. actual product may vary.

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