20N120 1200V 20A IGBT

20N120 1200V 20A IGBT

The 20N120 IGBT is a high-voltage, high-efficiency Insulated Gate Bipolar Transistor designed for switching and power control in medium to high-power electronic systems.
With a collector-emitter voltage of 1200V and a collector current rating of 20A, this IGBT combines the fast switching performance of a MOSFET with the high current and voltage handling capability of a bipolar transistor.

It provides low switching losses, rugged reliability, and excellent thermal performance, making it ideal for inverters, motor drives, and SMPS. Typically housed in a TO-247 or TO-3P package, it ensures easy mounting and efficient heat dissipation.

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Applications

• Inverter Circuits: For efficient DC to AC power conversion
• Motor Drives: Controls speed and torque of AC and DC motors
• Switch Mode Power Supplies (SMPS): Enables high-frequency, efficient power conversion
• UPS Systems: Provides reliable high-voltage switching for backup systems
• Induction Heating Systems: Used for high-frequency power switching
• Welding Equipment: Handles high current for precision and durability
• Solar Inverters & Power Control Units: Converts DC from solar panels to usable AC power

NGTB20N120 Datasheet

*Product image for illustration purposes only, actual product may vary.