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IRG4BC30UD IGBT – 600V UltraFast 8-60 kHz Copack IGBT

256.00 + GST

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The IRG4BC30UD is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Its is designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs. It is optimized for specific application conditions. The generation 4 IGBTs offers the highest efficiencies available. The HEXFRED diodes optimized for performance with IGBTs and the minimized recovery characteristics require less/no snubbing.


• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode

• Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast, ultra- soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-220AB package


Symbol Parameter Values Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C  Continuous Collector Current 13 A
IC @ TC = 100°C  Continuous Collector Current 6.5
ICM Pulsed Collector Current 52
ILM Clamped Inductive Load Current 52
IF @ TC = 100°C Diode Continuous Forward Current 7
IFM Diode Maximum Forward Current 52
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C 24
TJ Operating Junction and -55 to +150 °C
Tstg Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

* product image for illustration purposes only. actual product may vary.


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