The IRG4BC30UD is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. Its is designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs. It is optimized for specific application conditions. The generation 4 IGBTs offers the highest efficiencies available. The HEXFRED diodes optimized for performance with IGBTs and the minimized recovery characteristics require less/no snubbing.
Features:-
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra- soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
Specification:-
| Symbol | Parameter | Values | Units |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25°C | Continuous Collector Current | 13 | A |
| IC @ TC = 100°C | Continuous Collector Current | 6.5 | |
| ICM | Pulsed Collector Current | 52 | |
| ILM | Clamped Inductive Load Current | 52 | |
| IF @ TC = 100°C | Diode Continuous Forward Current | 7 | |
| IFM | Diode Maximum Forward Current | 52 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| PD @ TC = 25°C | Maximum Power Dissipation | 60 | W |
| PD @ TC = 100°C | 24 | ||
| TJ | Operating Junction and | -55 to +150 | °C |
| Tstg | Storage Temperature Range | ||
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
* product image for illustration purposes only. actual product may vary.
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