60N100BNTD IGBT 1000V 60A N Channel IGBT

60N100BNTD IGBT 1000V 60A N Channel IGBT

The 60N100BNTD is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage and high-current power switching applications. Rated at 1000V and 60A, it combines the fast switching capability of a MOSFET with the high-current handling capability of a bipolar transistor, delivering high efficiency and reliability in power electronics systems.

This IGBT is optimized for low conduction and switching losses, providing efficient thermal performance and rugged operation. Its design is ideal for applications where high-speed switching and durable high-power handling are required.

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• Type: N-Channel IGBT
• Collector-Emitter Voltage (Vce): 1000V
• Collector Current (Ic): 60A
• Package Type: TO-247 or similar high-power package
• Features: Fast switching, low conduction losses, high thermal stability, rugged design

Applications

• Inverter Circuits: DC–AC conversion for solar, industrial, and renewable energy inverters
• Motor Drives: Efficient control of AC and DC motors in industrial and automotive systems
• Switch Mode Power Supplies (SMPS): High-speed, high-efficiency power conversion
• UPS Systems: Reliable high-voltage switching for uninterrupted power supply
• Induction Heating Equipment: High-current, precise control for industrial heating applications
• Welding Machines: Robust, high-current switching for industrial welding operations
• Electric Vehicle Power Systems: Motor control and DC–DC conversion

*Product image for illustration purposes only, actual product may vary.