G15N60 Fast IGBT

G15N60 Fast IGBT

The G15N60 is a high-performance Fast Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. Rated at 600V and 15A, this device combines the fast switching characteristics of a MOSFET with the high current-handling capability of a bipolar transistor, making it suitable for medium-power electronics.

With low conduction and switching losses, the G15N60 provides improved efficiency, thermal stability, and reliable operation in industrial and consumer applications. Its fast switching design ensures high performance in inverters, motor drives, and SMPS circuits.

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• Type: N-Channel Fast IGBT
• Collector-Emitter Voltage (Vce): 600V
• Collector Current (Ic): 15A
• Package Type: TO-220 / TO-247 (check datasheet)
• Features: Fast switching, low losses, high efficiency, reliable performance

Applications

• Inverter Circuits: DC–AC conversion for solar, industrial, and consumer inverters
• Motor Drives: High-speed control of AC/DC motors
• Switch Mode Power Supplies (SMPS): Efficient high-frequency power switching
• UPS Systems: Reliable switching for backup power systems
• Industrial Automation: Medium-power control in machinery and robotics
• Welding Equipment & Heating Systems: Fast switching for precise energy control

*Product image for illustration purposes only, actual product may vary.