The STGF19NC60KD IGBT devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
Features:-
• Low on voltage drop (VCE(sat))
• Low CRES / CIES ratio (no cross-conduction susceptibility)
• Short-circuit withstand time 10 μs
• IGBT co-packaged with ultra fast freewheeling diode
Applications:-
• High frequency inverters
• Motor drives
Specification:-
| Symbol | Parameter | Values | Units |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25°C | Continuous Collector Current TC = 25 °C | 16 | A |
| IC @ TC = 100°C | Continuous Collector Current TC = 100 °C | 10 | |
| ICP | Pulsed Collector Current | 75 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| PTOT | Total dissipation at TC = 25 °C | 32 | W |
| TJ | Operating Junction | -55 to +150 | °C |
| Tstg | Storage Temperature Range |
* product image for illustration purposes only. actual product may vary.
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