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MJE340 NPN Bipolar Power Transistor 300V 500mA TO-126 Package

14.00 Excluding tax

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MJE340 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Features:-

• High DC current gain

• Low collector−emitter saturation voltage

• High current−gain − bandwidth product

• Annular construction for low leakage

• Complementary NPN – PNP devices

Specifications:-

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 300V
Collector−Base Voltage (VCBO) 300V
Emitter−Base Voltage (VEBO) 3V
Continuous Collector Current (Ic) 0.5A
Power Dissipation (Pd) 20.8W
Operating Temperature Range -65 – 150°C
DC Current Gain (hFE) 30-240

mje340-transistor-datasheet

* product image for illustration purposes only. actual product may vary.

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