50N60 K50T60 IGBT 50A 600V TO – 247 Package

50N60 K50T60 IGBT 50A 600V TO – 247 Package

The 50N60 (K50T60) IGBT is a high-efficiency Insulated Gate Bipolar Transistor designed for medium to high-power switching applications. With a collector current of 50A and a collector-emitter voltage of 600V, it combines the fast switching speed of a MOSFET with the high current handling capability of a bipolar transistor.
Encased in a TO-247 package, it offers excellent heat dissipation, low saturation voltage, and reliable performance, making it ideal for demanding power electronics applications.

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Applications

• Inverter Circuits – Efficient DC to AC conversion for solar and industrial inverters
• Motor Drives – Speed and torque control in AC/DC motor systems
• SMPS (Switch Mode Power Supplies) – High-frequency switching for power conversion
• UPS Systems – Power regulation and backup energy management
• Induction Heating – High-frequency power switching for heating applications
• Welding Equipment – Provides reliable high-current switching
• EV Chargers – Used in high-efficiency charging modules for electric vehicles

50N60 IGBT Datasheet