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CD4012 Dual 4-Input NAND Gate IC DIP-14 Package

12.00 + GST

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The NAND gate is monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide supply voltage range. No DC power other than that caused by leakage current is consumed during static conditions. All inputs are protected against static discharge and latching conditions.


  • Two Independent 4-input NAND Gates
  • Standard Pin Configuration
  • Wide Operating Voltage Range
  • Operating Temperature to 85°C
  • Low Power CMOS


Parameter Specification
Voltage at Any Pin  VSS -0.3V to VDD +0.3V
Operating Temperature Range  -40°C to + 85°C
Storage Temperature Range (TS)  -65°C to +150°C
Power Dissipation (PD): Dual-In-Line  700 mW
Operating Range (VDD)  VSS +3.0V to VSS +15V
Lead Temperature (TL)  260°C


* product image for illustration purposes only. actual product may vary.


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