G160N60 IGBT 600V 50A Ultra Fast IGBT

G160N60 IGBT 600V 50A Ultra Fast IGBT

The G160N60 is a high-performance, Ultra Fast Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Rated at 600V and 50A, it combines the fast switching speed of a MOSFET with the high current-handling capability of a bipolar transistor, making it ideal for medium- to high-power electronics.

This IGBT provides low conduction and switching losses, improved efficiency, and enhanced thermal performance, ensuring reliable operation in demanding industrial and consumer applications. Its design allows high-frequency operation, making it suitable for inverters, motor drives, and SMPS.

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• Type: N-Channel Ultra Fast IGBT
• Collector-Emitter Voltage (Vce): 600V
• Collector Current (Ic): 50A
• Switching Speed: Ultra Fast
• Package Type: TO-247 or similar high-power package
• Features: Low losses, fast switching, high thermal stability, rugged design

Applications

• Inverter Circuits: Efficient DC–AC conversion for solar and industrial inverters
• Motor Drives: High-speed, high-current switching for AC/DC motor control
• Switch Mode Power Supplies (SMPS): High-frequency power conversion with low losses
• UPS Systems: Reliable high-power switching for backup power
• Induction Heating: Fast, precise control of high-power industrial heating systems
• Welding Equipment: Robust high-current switching for industrial welding
• Industrial Automation: High-speed switching in robotics and machinery